Highly efficient power electronics based on silicon carbide
AIT develops innovative solutions in the field of power electronics for the next generation of energy-efficient converters. A current example is a 5-level phase-leg module of type E, which was used in conjunction with a specially developed silicon carbide (SiC) power module from Infineon Technologies for a three-phase 12-kVA power converter.
The combination of modern multi-level topology and SiC semiconductor technology enables operation with very high efficiency, significantly reduced switching and conduction losses, and improved power quality. At the same time, the weight and space requirements of the converter can be reduced, thereby significantly increasing both the weight- and volume-based power density.
The developed technology meets the growing demand for compact, high-performance, and resource-efficient power conversion systems. Potential applications range from renewable energy systems and battery storage to industrial drives and applications in electromobility. Through the combination of innovative topology development, state-of-the-art semiconductor technology, and system-oriented design, AIT is making an important contribution to the development of tomorrow’s energy-efficient power electronics.
