GaN power semiconductors
GaN power semiconductors open up a wide range of new application possibilities. This can include, for example, the simple parallelization of individual components or entire converters to achieve higher power levels and power densities. Multi-cell or multi-level topologies can help increase voltage handling capabilities, enabling the use of GaN HEMTs at higher voltages. Resonant converters can also significantly enhance the efficiency of GaN-based systems.
GaN technology at AIT
The AIT GaN inverter enables a significant increase in both power density and efficiency—compared to conventional converters—by paralleling discrete GaN HEMTs. The GaN inverter supports switching frequencies of up to 1 MHz and a maximum power output of 4.5 kW (at a switching frequency of 72 kHz). Its topology allows it to be used as a bidirectional AC/DC converter as well as a bidirectional DC/DC converter.
